Answers are grounded in this paper and cite their sources.
AlN has been grown on Si(111) substrates by metal organic chemical vapour deposition. The formation of an inversion layer on n-type Si(111) has been clearly observed by capacitance-voltage measurements at high and low frequencies. The interface trap level density was calculated to be in the range of 1011 cm–2eV–1 from capacitance-voltage and conductance-voltage measurements.
No takes yet. Share an insight, caveat, or question.
Zhang et al. (1996) studied this question.
Synapse has enriched 10 related papers. Consider them for comparative context: