Preparation of PZT Film on (100)Pt/(100) MgO Substrate by CVD and Its Properties

PZT thin films were epitaxially grown on (100)Pt/(100) MgO substrates by CVD under partial oxygen pressure (PO2) from 0.96 to 8.4Torr. The crystal structure and microstructure of the films were almost the same as those prepared on MgO substrates irrespective of PO2. However, for films deposited below 1.6Torr of PO2, the existence of PbPt5-7 phase was ascertained by XRD measurement, and the electric leakage between top and bottom electrodes was observed. The X-ray pole figure measurement showed that this PbPt5-7 was epitaxially related to the deposited PZT thin film and the (100)Pt/(100) MgO substrate. The relative dielectric constant, εr, of epitaxially grown Pb(Zr0.5Ti0.5)O3 films was about 300, lower than that of non-oriented film. This phenomenon can be elucidated by the fact that the calculated εr of PZT crystals along the c-axis is lower than that perpendicular to the c-axis.