Using the rectifying characteristics of grain boundaries, modified deep-level transient spectroscopy (DLTS) and optical deep-level transient spectroscopy (ODLTS) sensitive techniques have been developed for identification and for quantitative estimation of electron and hole traps in the region of grain boundaries. This method has been used in conjunction with conventional surface oriented Schottky barrier DLTS and ODLTS techniques to show accumulation of native defects, enhanced segregation, and diffusion of copper from the substrate along grain boundaries during epitaxy of GaAs.
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Spencer et al. (1979) studied this question.
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