Answers are grounded in this paper and cite their sources.
The effect of bandgap illumination and annealing below the glass transition temperature on the thickness and the optical bandgap of As-based (As2Se3 and As2S3). obliquely deposited chalcogenide thin films has been studied. It is observed that illumination increases the thickness and decreases the bandgap. By annealing the samples, before and/or after illumination, the trends of changes in thickness and bandgap are reversed. These changes have been explained on the basis of ordering of the structure by annealing, and of repulsion and slip motion by illumination, the latter processes being due to the negative charging of layers by electron accumulation in conduction-band tails.
No takes yet. Share an insight, caveat, or question.
Kuzukawa et al. (1999) studied this question.
Synapse has enriched 10 related papers. Consider them for comparative context: