We demonstrate a passively Q -switched diode-pumped 1.34- microm Nd:YVO(4) microchip laser. We achieved single-frequency, 230-ps pulses by using an InGaAsP semiconductor saturable-absorber mirror. We can vary the pulse width and the repetition rate from 230ps to 12ns and from 30 kHz to 4 MHz, respectively, by changing the design parameters of the saturable absorber, the thickness of the crystal, and the pump power.
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Fluck et al. (1997) studied this question.
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