Copper deficient p‐type conducting CuInSe2single crystals were implanted with 40 keV protons in the fluence range from 2.5 · 1014to 1.5 · 1016cm−2. Over the whole fluence range the implanted layers were n‐type conducting which is ascribed to passivation of the acceptors due to copper vacancies and formation of donors by hydrogen atoms located at interstitial positions. The thermal stability of the conductivity changes due to proton implantation is limited to temperatures below 100 °C.
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Yakushev et al. (1994) studied this question.
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