Hydrogen incorporation behaviour and radiation damage in proton bombarded InP single crystals

In proton bombarded InP single crystals the incorporation behaviour of different hydrogen isotopes is studied in relation to implantation induced radiation defects. Investigations of the fluence dependence (D = 1016-1018 cm−2), of the depth profile and of the annealing behaviour (T an = 300–1000 K) of hydrogen incorporation and of damage density indicate that only a small fraction of the implanted hydrogen is chemically bonded to host lattice atoms. These bonded hydrogen atoms saturate dangling bonds at defect sites.