Infrared absorption spectra are measured for GaP single crystals implanted with protons of different energies and fluences. Besides a localized mode due to PH bond vibrations the samples exhibit a second mode at about 1840 cm−1 which is ascribed to GaH bond vibrations. The dependence of the integrated absorption A of this mode on the fluence D follows the relation A ∽ Dn with n = 0.52. The results obtained are compared with previous studies on proton implanted GaP, GaAs, InP and ZnSe.
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Sobotta et al. (1988) studied this question.
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