High resistivity layers have been achieved in p-type InP using deuteron bombardment. A curve of average resistivity versus bombardment dose has been determined for p-type InP with an initial background carrier concentration of 1×1018 cm−3. It has been shown that average resistivities of 109 Ω cm or higher can be attained reproducibly, over a dose range 3×1013–1×1014 deuterons/cm2.
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Focht et al. (1983) studied this question.
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