An anomalous enhanced diffusion is observed when As-implanted Si samples are exposed to rapid heating (∼ seconds) from room temperature to temperatures exceeding 1000 °C. This diffusion can be characterized by a low activation energy of ∼1.8 eV and is active during a very short time (≲ 1 s) probably during the rapid heating up of the sample.
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Kalish et al. (1984) studied this question.
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