Uphill diffusion of boron or phosphorus in silicon due to high-temperature proton irradiation is explained by a proposed model in which a vancancy mechanism is assumed. The results calculated from the model show good agreement with the experimentally measured profiles, and some physical parameters can be estimated. A significant feature of the proposed model is that Fick’s law is included as a special case.
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Morikawa et al. (1980) studied this question.
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