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An optical switch made of carrier depletion directional couplers based on GaInAsP/InP double-heterostructure waveguides with integrated detectors was realised. The device was fabricated using a two step Cl-VPE epitaxy and shows good performances both in terms of switching (phase modulation efficiency ñ 12°/V/mm) and detecting properties (detector leakage current ñ 1 nA at −5 V).
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Cavaillès et al. (1990) studied this question.
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