Effects of Ultrathin Al Layer Insertion on Resistive Switching Performance in an Amorphous Aluminum Oxide Resistive Memory, Song, Jaehoon, Inamdar, Akbar I., Jang, ByeongUk, Jeon, Kiyoung, Kim, YoungSam, Jung, Kyooho, Kim, Yongmin, Im, Hyunsik, Jung, Woong, Kim, Hyungsang, Hong, J. P.
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Song et al. (2010) studied this question.
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