We studied the relationship between the resistive-switching properties of the Pr0.7Ca0.3MnO3(PCMO) thin-film elements and their geometry dimensions below submicrometers. Our electrical test results of a series of PCMO-based resistive-switching devices with different sizes show that switching voltages of ±2.5 V were achieved by reducing the PCMO layer thickness to 30 nm. In addition, the reduction of the PCMO layer thickness does not incur a significant impact upon the device reliability, i.e., no significant degradation of the two resistance states was observed after 1.5 × 103programming cycles.
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Chen et al. (2010) studied this question.
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