The authors studied the relationship between electrical resistivity and resistive switching properties in various stoichiometric and nonstoichiometric Pr1−xCaxMnO3 (PCMO) (x=0.3) thin films fabricated by pulsed laser deposition. The resistivity of Pt/PCMO/Pt structured thin films depended mainly on the PCMO deposition temperature, which was related to the crystallinity of the thin films. The highest resistivity was obtained from the lowest deposition temperature (300°C) specimen, and it was amorphous, while higher temperature deposition specimens (500–800°C) showed specific crystallographic orientation depending on the deposition temperature but showed quite low resistivity. Amorphous film deposited at 350°C exhibited monopolar resistive switching when pulses were applied.
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Fujimoto et al. (2006) studied this question.
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