CW 140 W recessed-gate AlGaN/GaN MISFET with field-modulating plate

The recessed-gate AlGaN/GaN metal-insulator-semiconductor (MIS) FET with a field-modulating plate (FP) has been fabricated. At a reverse bias condition, gate-leakage current is 10−9 A/mm and gate-drain breakdown voltage is over 200 V, which is four times higher than that of a conventional AlGaN/GaN MISFET without an FP. At 2 GHz, a 48 mm-wide recessed MIS-FP-FET demonstrated a CW saturated output power of 141 W (2.9 W/mm), a linear gain of 7.6 dB and a power-added efficiency of 56% with a drain bias of 40 V. A total CW output power of 141 W is the highest ever achieved for any III-V compound-semiconductor MISFETs.