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The first power results of GaN MESFET achieved at 2 GHz are presented. A power density of 2.2 W/mm has been obtained with an associated power added efficiency of 27% at V/sub ds/=30 V and V/sub gs/=-2 V. These results represent a significant improvement over similar MESFET's or HFET's grown on GaAs or InP substrates.
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Gaquière et al. (2000) studied this question.
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