The thermal degradation behaviour of AlGaN/GaN HFETs with advanced source/drain and gate metallisations is reported. Using electrical and XRD measurements, it is demonstrated that HFETs with barrier-containing Ti/Al/Ti/AuJWSiN ohmic and the Ir/Au Schottky contacts are stable during aging at 500°C up to 120 h.
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Hilsenbeck et al. (2000) studied this question.
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