Pseudomorphic Ga 0.2 In 0.8 P/Ga 0.47 In 0.53 As/InPHEMTgrown by MOVPE using TBP and TBA

A pseudomorphic Ga0.2In0.8P/Ga0.47In0.53As/InP high electron mobility transistor grown by MOVPE using TBP and TBA is reported for the first time. The extrinsic transconductances of 480 and 620 mS/mm with the maximum output current of 660 and 780 mA/mm were achieved for the 1.2 µm gate length device at 300 and 77 K, respectively. These data are comparable to those of AlInAs/GaInAs HEMTs grown by MOVPE and MBE indicating the good material quality.