Improved breakdown voltage and impact ionization in InAlAs∕InGaAs metamorphic high-electron-mobility transistor with a liquid phase oxidized InGaAs gate

The In0.52Al0.48As∕In0.53Ga0.47As metal-oxide-semiconductor metamorphic high-electron-mobility transistors (MOS-MHEMTs) with a thin InGaAs native oxide layer (∼10–15nm) are demonstrated. The gate dielectric is directly obtained by oxidizing InGaAs material in a liquid phase solution. As compared to its counterpart MHEMTs, the MOS-MHEMTs have larger gate swing voltages, higher gate-to-drain breakdown voltages, and lower gate leakage currents with the suppressed impact ionization effect due to its higher barrier height.