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The effects of gate recess etch profiles on DC and RF characteristics of passivated, double pulse doped AlInAs/GaInAs/InP HEMTs were investigated. On-wafer characterisation has revealed that double recessed devices have higher breakdown voltage, lower output conductance, input capacitance, and feedback capacitance compared to conventional single recessed devices.
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Hur et al. (1995) studied this question.
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