X-ray photoelectron diffraction of the silicon–diamond interface

Natural diamond (100) surface, highly (100) oriented chemical vapour deposited (CVD) diamond films, and interface layers between the silicon substrate and the CVD diamond are analysed by X-ray induced photoelectron diffraction (XPD). Measured 2π patterns of natural diamond C1s emission at 964 eV are compared to single scattering cluster (SSC) calculations. Excellent agreement is found and comparisons show that photoelectron forward focusing is much less prominent in carbon solids than in previously studied, heavier elements. No orientation is observed for silicon evaporated on natural diamond and the interface shows no carbide formation. After 8 min of oriented diamond growth in microwave plasma, XPD shows an (100) oriented SiC interface and a preferential orientation of the microscopic crystals. SSC simulations confirm the presence of β-SiC at the interface. It appears that the SiC interface is always oriented independent of the parameters used for the bias treatment.