Efficient optical phase modulation in a nearly travellingwave semiconductor laser amplifier, via modulation of the amplifier injection current, is proposed and demonstrated. Using a 500µm-long GaInAsP buried heterostructure amplifier and a 1530nm optical carrier, phase deviations of the order of 0.1 rad/mA are obtained for modulation frequencies in the range 100 MHz to 2 GHz.
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J. Mellis (1989) studied this question.
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