Tensile strained InGaP-InGaAsP-GaAsP single quantum well broad area lasers have been grown by metalorganic chemical vapor deposition and the effects of strain on the device parameters have been studied. The lasing mode is found to be TE for a strain of -0.46% and TM for a strain of -0.71%. The role of barrier height in controlling gain and temperature dependence in this system is measured. A low threshold current density of 221 A/cm/sup 2/ has been obtained for a cavity length of 2.34 mm with -0.46% strain.>
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Uppal et al. (1995) studied this question.
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