We report a post-metallization annealing study of very thin oxide (2.4–3.2 nm), aluminum gate metal-tunnel oxide-(p) silicon devices. Voltage dependence measurements of both tunnel current and high-frequency capacitance as functions of anneal time and temperature reveal that annealing the thin oxide devices after metallization leads to a decrease in interface state density, with dynamics which are similar to, though slower than, what has been observed in thicker oxide aluminum gate systems.
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Lundgren et al. (1993) studied this question.
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