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September 11, 1975Journal of Physics D Applied PhysicsOpen Access

An investigation of the influence of low-temperature annealing treatments on the interface state density at the Si-SiO2

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YYY.T. YeowQueensland University of TechnologyDLD. R. LambUnited States Department of AgricultureSBS. D. BrothertonEast Sussex County Council

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Yeow et al. (1975) studied this question.

synapsesocial.com/papers/6a896bd11c2149f7933332eehttps://doi.org/10.1088/0022-3727/8/13/011
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