Many metal-oxide-semiconductor (MOS) devices rely upon surface passivation for improved performance. An oxide grown in the presence of Cl was evaluated using highly efficient, surface-passivated, photovoltaic cells. The Cl-containing oxide gave increased efficiency, increased stability, and reduced surface-state density. Spectral response, Auger, and secondary ion mass spectrometry (SIMS) data support these conclusions. Preliminary results regarding stoichiometry of the oxide are presented.
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Jackson et al. (1985) studied this question.
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