We compare InP-based materials systems for multiple quantum well modulator application in the 1.06 μm wavelength range. Quantum well/barrier systems studied are the lattice-matched system InxGa1−xAsyP1−y/InP, the strained system InAsyP1−y/InP, and the strain-balanced system InAsyP1−y/InxGa1−xP. 50 period samples were grown on InP substrates by chemical beam epitaxy. We find the ternary systems to be better than the quaternary in terms of exciton peak sharpness. The InAsyP1−y/InxGa1−xP system was best overall, with our results suggesting that it is coherently strained to the InP substrate.
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Woodward et al. (1992) studied this question.
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