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This report is, as far as we know, the first to demonstrate ferroelectric domain inversion in a photorefractive-damage-resistant MgO:LiNbO3 (MgO:LN) crystal upon electron beam irradiation. The domain inversion was found to be achieved by applying an electron-beam-induced electric field (EBIEF). By comparing the requirements of electron beam irradiation for domain inversion in MgO:LN, LiNbO3 and LiTaO3, a domain in MgO:LN was found to exhibit the highest critical values of current i c and time t c among these crystals. The relationship between i c and t c was explained in terms of a simple charge leakage model.
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Kurimura et al. (1996) studied this question.
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