What question did this study set out to answer?

Investigate the microscopic mechanisms responsible for the non-additive irradiation synergistic effect caused by combined neutron and gamma-ray exposure in silicon bipolar junction transistors.

July 21, 2023The Journal of Chemical Physics

The mechanism of the irradiation synergistic effect of silicon bipolar junction transistors explained by multiscale simulations of Monte Carlo and excited-state first-principle calculations

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Authors

ZYZeng-hui YangJiangnan University YLYang LiuBeijing Institute of Technology NANing AnChina University of Geosciences (Beijing)

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Implication

Multiscale simulation study reveals electronic excitation mechanisms driving irradiation synergistic effects in silicon bipolar transistors, indicating defect diffusion explains polarity differences.

Key Points

Investigate the microscopic mechanisms responsible for the non-additive irradiation synergistic effect caused by combined neutron and gamma-ray exposure in silicon bipolar junction transistors.
Constructed a multiscale simulation framework combining Monte Carlo modeling of gamma-ray exposure with excited-state first-principles calculations.
Directly modeled gamma-ray-induced electronic excitations to evaluate defect reactions without relying on unverified phenomenological assumptions.
Excited-state calculations matched experimental observations and demonstrated that gamma-ray-induced electronic excitations produce effects distinct from simple defect charge state or temperature alterations.
Formulated a qualitative, diffusion-based model explaining why NPN and PNP bipolar junction transistors exhibit opposite (positive versus negative) irradiation synergistic effects.

Cite This Study

Yang et al. (2023) studied this question.

synapsesocial.com/papers/6a9178d98b327ab88bab567e https://doi.org/10.1063/5.0159746

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Implication

Multiscale simulation study reveals electronic excitation mechanisms driving irradiation synergistic effects in silicon bipolar transistors, indicating defect diffusion explains polarity differences.

The mechanism of the irradiation synergistic effect of silicon bipolar junction transistors explained by multiscale simulations of Monte Carlo and excited-state first-principle calculations

Discussion

Member takes

Implication

Key Points

Cite This Study

The mechanism of the irradiation synergistic effect of silicon bipolar junction transistors explained by multiscale simulations of Monte Carlo and excited-state first-principle calculations

Discussion

Member takes

Implication

Key Points

Cite This Study

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