Performance Enhancement of Near-UV Light-Emitting Diodes With an InAlN/GaN Superlattice Electron-Blocking Layer

In this study, the characteristics of the nitride-based near-UV light-emitting diode (LED) with an InAlN/GaN superlattice (SL) electron-blocking layer (EBL) are analyzed numerically and experimentally. The emission spectra, carrier concentrations in the quantum wells, energy-band diagrams, electrostatic fields, and internal quantum efficiency are investigated. The results indicate that the LED with an InAlN/GaN SL EBL has a better hole-injection efficiency and lower electron leakage over the LED with a conventional rectangular AlGaN EBL or with an AlGaN/GaN SL EBL. The results also show that the efficiency droop is markedly improved when the InAlN/GaN SL EBL is used.