High-power GaN-based blue-violet laser diodes with AlGaN∕GaN multiquantum barriers

AlGaN ∕ GaN multiquantum barriers (MQBs) were introduced into violet AlInGaN laser diodes with an InGaN multiquantum-well structure, resulting in drastic improvements in lasing performance. Comparing with conventional AlGaN single electron blocking layer (EBL), lower threshold current of 32mA and higher slope efficiency of 1.12W∕A at room temperature has been achieved by using the AlGaN∕GaN multiquantum barrier. This improvement implies that p-type AlGaN∕GaN MQBs are more effective in suppressing the overflow of electrons than p-type AlGaN single EBL. Effective barrier heights of the MQBs should be higher than the single EBL due to the quantum effect of MQBs and the enhancement of p-type doping efficiency. Additionally, the effect of strain on InGaN multiquantum wells from the single EBL can be reduced by using the AlGaN∕GaN MQBs structure.