Infrared Response and Optoelectronic Memory Device Fabrication Based on Epitaxial VO 2 Film

In this work, high-quality VO 2 epitaxial films were prepared on high-conductivity n-GaN (0001) crystal substrates via an oxide molecular beam epitaxy method. By fabricating a two-terminal VO 2 /GaN film device, we observed that the infrared transmittance and resistance of VO 2 films could be dynamically controlled by an external bias voltage. Based on the hysteretic switching effect of VO 2 in infrared range, an optoelectronic memory device was achieved. This memory device was operated under the “electrical writing–optical reading” mode, which shows promising applications in VO 2 -based optoelectronic device in the future.