Ultrawide bandgap spinel γ-(Ga0.8Ge0.2)2O3 alloy semiconductor epitaxial thin films

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Epitaxial growth of phase-pure and high-quality spinel γ-Ga2O3-based semiconductor thin films has been a big challenge for fundamental research on metastable defective inverse spinel γ-Ga2O3 semiconductors in view of potential device application. We report experimental results on epitaxial growth, microstructural, and electrical transport properties of (001)-oriented nominal γ-(Ga0.8Ge0.2)2O3 alloy semiconductor single crystal thin films with a coherent interface on cubic spinel (001) MgAl2O4 substrates by pulsed laser deposition using a Ge-rich target. Pristine films are found to be composed of about 2 nm thick insulating Ge-rich surface layers and the high-quality epitaxial n-type semiconductor film layers consisting of partially subvalent Ge2+ and Ga1+ cations as well as major components of normal Ge4+ and Ga3+ cations. Epitaxial films exhibit a direct bandgap of about 5.2 ± 0.1 eV and a valence band maximum of about 3.3 ± 0.1 eV below the Fermi level at room temperature. We further report a demonstration of γ-(Ga0.8Ge0.2)2O3 thin film-based metal-semiconductor field-effect transistor (MESFET) with the PtOx/Pt Schottky gate contact realized upon the surface pretreatment by Ar/O2 plasma etching. The MESFET device exhibits a clear field-effect with drain current modulation of about 105 orders of magnitude. This work not only significantly advances the fundamental and application-oriented research on epitaxial spinel γ-Ga2O3-based semiconductor films for practical device application but also offers new insight into microstructural characteristics of ultrawide bandgap spinel oxide semiconductor epitaxial thin films.