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January 1, 2001IEEE Transactions on Electron Devices

Group IVB metal oxides high permittivity gate insulators deposited from anhydrous metal nitrates

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TMTiezhong MaZhejiang Province Institute of Architectural Design and ResearchSCStephen A. CampbellCambridge University Hospitals NHS Foundation TrustRSRyan C. SmithAquatic Systems (United States)

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Ma et al. (2001) studied this question.

synapsesocial.com/papers/6a9180169cd6bcde3cfb6054https://doi.org/10.1109/16.954476
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