We report on the thermal stability and trap characteristics of HfON as a trapping layer in charge trap flash memory device applications. Compared to , HfON prepared by annealing of exhibits good interfacial quality, excellent memory properties, and superior thermal stability. The improvement in thermal stability can be explained by the lower interfacial reaction and amorphous state of HfON. The activation energy of a device and the trap level of the HfON trapping layer were found to be 1.08 and , respectively.
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Sanghun Jeon (2009) studied this question.
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