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The thermal stability of sputter deposited LaAlOx and lanthanum aluminum oxynitride (LaAlON) dielectrics on top of Si (100) was evaluated after 1000°C rapid thermal annealing (RTA). A nitrogen concentration of ∼3at.% in the bulk LaAlON film was found to suppress crystallization as well as metal (lanthanum and aluminum) outdiffusion into the Si (100) substrate after the RTA treatment. These results suggest that film microstructure should be carefully controlled to inhibit impurity diffusion in the conventional gate stack fabrication process.
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Sivasubramani et al. (2006) studied this question.
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