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April 29, 2002Applied Physics Letters

Application of HfSiON as a gate dielectric material

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Authors

MVM. R. VisokayIBM (United States)JCJames J. ChambersUniversity of Massachusetts AmherstARAntonio RotondaroElectron Optica (United States)

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Visokay et al. (2002) studied this question.

synapsesocial.com/papers/6a8384f26abe336c4339cb91https://doi.org/10.1063/1.1476397
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