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Silicon MOS transistors having amorphous Ta/sub 2/O/sub 5/ insulator gates have been fabricated. The Ta/sub 2/O/sub 5/ films were deposited using a low pressure (a few mtorr) plasma-enhanced CVD process in a microwave (2.45 GHz) excited electron cyclotron resonance reactor. The source gas was TaF/sub 5/. Electrical characteristics of p-channel Al gate transistors are presented.
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Autran et al. (1997) studied this question.
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