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A Monte Carlo study of high-field electronic transport in silicon dioxide is undertaken. Contrary to previous theoretical studies, we do not model the electronic structure by a single free-electron-like band. Our model accounts for a set of satellite valleys which contribute density of states needed for effective scattering at a few electronvolts. We find that the electronic distribution is stable for fields on the order of 10 MV/cm.
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Porod et al. (1985) studied this question.
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