Using standard planar 22-nm-nMOS devices featuring a typical metalurgical length lower than 10 nm, we investigated the impact of nanoscale phenomena on device behavior. The data show that direct source-drain tunneling dominates the device leakage below 250 K and that carrier transport approaches the ballistic limit. The significant contribution of access resistance is revealed by low-temperature measurements below the superconducting transition of the cobalt disilicide contacts.
No takes yet. Share an insight, caveat, or question.
Jehl et al. (2004) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: