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We present a study of the electrical transport in (Si/CaF2)n superlattices with n=100 and with Si, CaF2 thickness in each period in the range of 1.2–1.6 nm (Si) and below 1 nm (CaF2), respectively. The results suggest that at gate voltages higher than ±4 V a Poole–Frenkel-type mechanism accounts for the observed electric-field-assisted conduction through the layers.
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Ioannou-Sougleridis et al. (2001) studied this question.
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