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In this work, microRaman spectroscopy is applied for the stress analysis of LPCVD polysilicon films deposited on SiO 2 sacrificial layers. The features of the first-order Si Raman signal (shape, width and position of maximum) are analyzed taking into account the presence of structural defects and stress distribution in the layers. These measurements are correlated with the results obtained by using micromachined test structures.
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Benrakkad et al. (1995) studied this question.
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