What type of study is this?

This is a Quantitative Study study.

September 19, 2025

Volumetric non-destructive imaging of strain in silicon using stimulated Raman scattering at telecom wavelengths

View Full Paper

Ask AI

Bookmark

Volumetric measurement of residual stresses in silicon was effectively achieved using stimulated Raman scattering.
The method employed a pump beam at 1.56 µm and a Stokes beam at 1.7 µm to capture the measurements.
Microscopy techniques were utilized for this non-destructive imaging, allowing for accurate stress analysis.
These findings suggest a promising approach for evaluating silicon wafers without causing damage.

Implication

Microscopy demonstrates volumetric measurement of residual stresses in silicon wafers, highlighting its non-destructive capabilities.

Abstract

We demonstrate stimulated Raman scattering microscopy for non-destructive, volumetric measurement of residual stresses within silicon wafers, employing a pump beam at 1.56 µm and a Stokes beam at 1.7 µm.

Discussion

No takes yet. Share an insight, caveat, or question.

Cite This Study

Sano et al. (2025) studied this question.

synapsesocial.com/papers/68d464f831b076d99fa646d3 https://doi.org/10.1364/cleo_at.2025.aa118_1

View Full Paper

Ask AI

Bookmark

Implication

Microscopy demonstrates volumetric measurement of residual stresses in silicon wafers, highlighting its non-destructive capabilities.

Volumetric non-destructive imaging of strain in silicon using stimulated Raman scattering at telecom wavelengths

Key Points

Implication

Abstract

Discussion

Cite This Study

Volumetric non-destructive imaging of strain in silicon using stimulated Raman scattering at telecom wavelengths

Key Points

Implication

Abstract

Discussion

Cite This Study

Keep reading

Keep reading