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Raman spectroscopy has been used to study structural disorder in silicon implanted with phosphorus and boron ions. Line-shape asymmetry of the one-phonon mode and the oscillator strength of the two-phonon combination spectra are used to characterize the disorder. This analysis permits a rough identification of the threshold for formation of microcrystallites embedded in an amorphous continuum.
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Jain et al. (1985) studied this question.
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