Study of Indentation Damage in Single Crystal Silicon Carbide by Using Micro Raman Spectroscopy

This is the authors' abstract. We don't add key points for this paper.

Raman spectroscopic study is carried on the Vickers indented area on the surface of a single crystal silicon carbide (4H- and 6H-SiC) as a nondestructive structure probe to investigate a residual stress and crystal structure. LO phonon frequency shifts and the broad and weak bands around LO phonon band were observed. The residual strain field around the indentation is discussed.