The semiconducting and mechanical properties of diamond thin films have been investigated in the context of thermistors and pressure transducers for high-temperature environments. This paper considers the conduction mechanisms which contribute to the temperature coefficient of resistance of boron-doped diamond. The influence of temperature on the Young's modulus of diamond films is discussed with respect to microstructure and the limits imposed by high-temperature oxidation.
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Chalker et al. (2003) studied this question.
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