High-field galvanomagnetic measurements are carried out on n- and p-type silicon in the concentration range corresponding to the metal-nonmetal transition. Abnormally large positive magnetoresistance is accompanied by a corresponding increase in the Hall coefficient with magnetic field. Expressions for resistivity and Hall coefficient are derived, and the predicted value of [Δρ(H)ρ(0)][ΔR(H)R(0)] is consistent with experimental results.
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Sträub et al. (1968) studied this question.
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