The kinetics of the thermal oxidation of (111) and (100) oriented silicon in and mixtures were investigated over the temperature range 900°–1100°C. Effective values of the parabolic and linear rate constants in the general oxidation relationship and therefore over‐all oxidation rates were found to increase with increasing concentrations of . Additions of to also increased the oxidation rates, but results were more erratic. The experimental oxide thickness‐oxidation time data for the ambients were compared with those calculated from a relationship involving the simultaneous oxidation of silicon by two independent oxidation species. Since and are possible reaction products of and , the results of this investigation were compared with those previously obtained for silicon oxidations. Reaction mechanisms of the silicon oxidations, including possible effects due to the presence of and , are discussed.
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Deal et al. (1978) studied this question.