Molecular beam epitaxy of GaSb

The p-type nature of unintentionally doped GaSb molecular beam epitaxy grown layers has been attributed to native defects resulting from insufficient Sb incorporation. As a means to improve the quality of GaSb epilayers, growth on (311) B substrates was studied and shown to produce Te-doped GaSb layers with room-temperature mobilities of 6780 cm2/V s at carrier densities of 9×1015 cm−3 and AlGaSb/GaSb p-i-n diode structures with breakdown voltages as high as 20 V. These mobilities and breakdown voltages are the highest achieved for molecular beam epitaxy grown GaSb-based structures.